AOTF10N90 900v, 10a n-channel mosfet general description product summary v ds i d (at v gs =10v) 10a r ds(on) (at v gs =10v) < 0.98 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOTF10N90l symbol v ds the AOTF10N90 has been fabricated using an advanced high voltage mosfet process that is designed to del iver high levels of performance and robustness in popula r ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this par t can be adopted quickly into new and existing offline po wer supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 1000v@150 drain-source voltage 900 AOTF10N90 g d s g d s top view to-220f AOTF10N90 v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q jc * drain current limited by maximum junction tempera ture. 2.5 units c/w AOTF10N90 65 p d t c =25c thermal characteristics 300 -55 to 150 50 0.4 avalanche current c 205 single pulsed avalanche energy g 410 3.7 repetitive avalanche energy c gate-source voltage t c =100c a 38 pulsed drain current c continuous drain current t c =25c i d v 30 10* 7* maximum junction-to-case mj c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 5 junction and storage temperature range maximum junction-to-ambient a,d power dissipation b a w w/ o c c mj v/ns c rev0: oct 2012 www.aosmd.com page 1 of 5
AOTF10N90 symbol min typ max units 900 1000 bv dss / ? tj 0.9 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.82 0.98 w g fs 17 s v sd 0.7 1 v i s maximum body-diode continuous current 10 a i sm 38 a c iss 2100 2630 3160 pf c oss 130 190 250 pf c rss 10 18 26 pf r g 1.5 3.4 5.2 w q g 45 60 75 nc q gs 13 nc q gd 27 nc t d(on) 64 ns t r 105 ns t d(off) 155 ns i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10v, v ds =720v, i d =10a gate source charge static drain-source on-resistance v gs =10v, i d =5a maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =450v, i d =10a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v, i d =250 m a v ds =720v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =900v, v gs =0v bv dss id=250 a, vgs=0v m a v ds =0v, v gs =30v v drain-source breakdown voltage v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =5a forward transconductance diode forward voltage t d(off) 155 ns t f 84 ns t rr 460 575 700 ns q rr 7.0 9.9 12.0 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =10a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =10a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.7a, v dd =150v, r g =25 ? , starting t j =25 c rev0: oct 2012 www.aosmd.com page 2 of 5
AOTF10N90 typical electrical and thermal characteristics 0 5 10 15 20 25 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 10v 6v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics -55 c v ds =40v 25 c 125 c 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5a 6.5v 40 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temparature rev0: oct 2012 www.aosmd.com page 3 of 5
AOTF10N90 typical electrical and thermal characteristics 0 3 6 9 12 15 0 15 30 45 60 75 90 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =720v i d =10a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 9: current de - rating (note b) figure 10: maximum forward biased safe operating area for AOTF10N90 (note f) figure 9: current de - rating (note b) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOTF10N90 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: oct 2012 www.aosmd.com page 4 of 5
AOTF10N90 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - vdc id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: oct 2012 www.aosmd.com page 5 of 5
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